U.S. patents available from 1976 to present.
U.S. patent applications available from 2005 to present.

Light-emitting diode having a surface electrode of a tree-like form

Patent 5309001 Issued on May 3, 1994. Estimated Expiration Date: Icon_subject November 24, 2012. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.

Patent References

Electrical contact for an LED
Patent #: 4864370
Issued on: 09/05/1989
Inventor: Gaw ,   et al.

Light-emitting diode having light reflecting layer Patent #: 5132750
Issued on: 07/21/1992
Inventor: Kato, et al.

Inventors

Application

No. 980666 filed on 11/24/1992

US Classes:

257/99, With housing or contact structure257/91, With shaped contacts or opaque masking257/778, Flip chip257/E33.065Characterized by shape (EPO)

Examiners

Primary: Hille, Rolf
Assistant: Tran, Minh Loan

Attorney, Agent or Firm

Foreign Patent References

  • 0045678 EP 02/13/1982
  • 56-142666 JP 11/13/1981
  • 57-40986 JP 03/13/1982
  • 57-97686 JP 06/13/1982
  • 57-183081 JP 11/13/1982
  • 61-5585 JP 01/13/1986
  • 61-6880 JP 01/13/1986
  • 61-296779 JP 12/13/1986
  • 63-245969 JP 10/13/1988
  • 2-174273 JP 07/13/1990

International Class

H01L 033/00

Foreign Application Priority Data

1991-11-25 JP

Abstract

A surface electrode on a surface of a LED has a pad, and further, at least first-order branches linearly extending from the pad, second-order branches diverged and linearly extending from the first-order branches, and third-order branches diverged and linearly extending from the second-order branches. The pad out of the surface electrode is not in electrical contact with a underlying semiconductor layer, whereas the surface electrode and the semiconductor layer are in electrical contact with each other at ends of the highest-order branches. Also, the semiconductor layer is provided along a pattern of the surface electrode in a mesa shape. Thus, ineffective light emission underneath the surface electrode is relatively reduced so that external quantum efficiency can be improved, and moreover even shorter-wavelength light can be allowed to go out at high efficiency by omitting a current diffusion layer.

Other References

  • Patent Abstracts of Japan, vol. 10, No. 145 (E-407)(2202) 28 May 1986 & JP-A-61-6 880 (Roomu K.K.) 13 Jan. 1986, Ichihara et al
  • Patent Abstracts of Japan, vol. 13, No. 53 (E713) 7 Feb. 1989 & JP-A-63-245 969 (Seiko Epson Corp.), 13 Oct. 1988, Takashi
  • Stinson, et al., "High-efficiency InGaP light-emitting diodes on GaP substrates", Applied Physics Letters, 58(18):2012-2014 (1991
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