Endpoint and uniformity determinations in material layer processing through monitoring multiple surface regions across the layer
Patent 5308447 Issued on May 3, 1994. Estimated Expiration Date: 
June 9, 2012. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.
June 9, 2012. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.Patent ReferencesTechnique for determining the end point of an etching process Process monitor and method thereof Method for measuring plasma properties in semiconductor processing Spray etching apparatus with automatic individually controllable etching jets Apparatus and method for controlling processing uniformity in a magnetron Patent #: 5147520 InventorsApplicationNo. 896132 filed on 06/09/1992US Classes:216/23, FORMING OR TREATING ARTICLE CONTAINING A LIQUID CRYSTAL MATERIAL216/61, By electrical means or of an electrical property216/67, Using plasma216/86, By electrical means or of an electrical property216/92, Projecting etchant against a moving substrate or controlling the angle or pattern projection of the etchant or controlling the angle or pattern of movement of the substrate257/E21.528, Acting in response to ongoing measurement without interruption of processing, e.g., endpoint detection, in-situ thickness measurement (EPO)427/9, Thickness or uniformity of thickness determined427/10Electrical or opticalExaminersPrimary: Dang, ThiAttorney, Agent or FirmForeign Patent References
International ClassG01N 021/00AbstractTechniques of monitoring and controlling removal or forming of layers of material, such as employed in the manufacture of flat panel displays and integrated circuit wafers. Examples of material removal include the development of a photoresist layer and etching of layers of other material according to a pattern across the surface of the layer. The material removal process is terminated in response to detecting when breakthrough occurs in a preselected number of individual regions across the surface of the layer. A measure of uniformity of processing across the layer surface is obtained from monitoring removal of material in such individual surface regions, and can be used to control the process to improve such uniformity.Other References
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