Pyrometer apparatus for use in rapid thermal processing of semiconductor wafers
Patent 5308161 Issued on May 3, 1994. Estimated Expiration Date: 
February 11, 2013. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.
February 11, 2013. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.Patent References 3586851 Optical pyrometer and technique for temperature measurement Dual sensor radiation pyrometer Apparatus for measuring thickness of layer on substance Additive composition, for gasoline Emissivity correction apparatus and method Non-contact techniques for measuring temperature or radiation-heated objects Patent #: 5154512 InventorAssigneeApplicationNo. 016713 filed on 02/11/1993US Classes:374/5, With heating or cooling of specimen for test250/227.14, Condition responsive light guide (e.g., light guide is physically affected by parameter sensed which results in light conveyed to the photocell)250/341.4, With semiconductor sample362/268, Plural serial lens elements or components374/9, EMISSIVITY DETERMINATION374/126, Having emissivity compensating or specified radiating surface392/416With chamberExaminersPrimary: Yasich, Daniel M.International ClassesG01J 005/10G01N 025/20 H05B 003/62 AbstractPyrometer apparatus measures the temperature of a semiconductor wafer which when heated by radiation from a bank of lamps emits thermal radiation which includes radiation contained in a selected spectral band. The apparatus includes a reaction chamber supporting the wafer and disposed above the bank of lamps. A hollow envelope reflecting incident radiation and thermal radiation from the wafer surrounds and is spaced from the chamber and the bank of lamps. A portion of the reflected radiation and the thermal radiation passes upwardly through a first opening. A source of said incident radiation disposed adjacent a second opening produces radiation within said spectral band which enters said envelope and is reflected inside the envelope to illuminate a selected spot on the wafer hemispherically. The spot reflects a portion of the incident radiation upwardly through the first opening. A device disposed outside of said envelope adjacent and above the first opening in the path of the reflected portion of incident radiation and said upward portion of wafer thermal radiation and responds within said spectral band to both of said portions to produce a first electrical signal proportional to the said reflected portion of incident radiation and a second electrical signal proportional to said upward portion of wafer thermal radiation. Another device responds to the first and second electrical signals to calculate the temperature of the wafer.Other References
Field of SearchWith heating or cooling of specimen for testHaving emissivity compensating or specified radiating surface With radiation conducting element Optical system structure (e.g., lens) EMISSIVITY DETERMINATION Including heat energy reflecting or directing means Convertible Plural serial lens elements or components | |
