Method of making silicides by heating in oxygen to remove contamination Patent #: 4886765
ApplicationNo. 718674 filed on 06/21/1991
US Classes:438/595, Having sidewall structure257/E21.193, On single crystalline silicon (EPO)257/E21.218, Plasma etching; reactive-ion etching (EPO)257/E21.226, Dry cleaning (EPO)438/700, Formation of groove or trench438/704, Having liquid and vapor etching steps438/714, Including change in etch influencing parameter (e.g., energizing power, etchant composition, temperature, etc.)438/723, Silicon oxide or glass438/906, CLEANING OF WAFER AS INTERIM STEP438/974SUBSTRATE SURFACE PREPARATION
ExaminersPrimary: Hearn, Brian E.
Assistant: Everhart, B.
Attorney, Agent or Firm
International ClassesH01L 021/00
Foreign Application Priority Data1990-07-09 JP
AbstractA principal feature of the present invention is to clean a surface of a semiconductor substrate without providing a damaged layer to the surface thereof. A native oxide film formed on the surface of a silicon substrate is etched by plasma employing a gas containing fluorine. The surface of the semiconductor substrate is again subjected to plasma etching by employing a gas containing fluorine in order to remove a surface damaged layer and a fluorocarbon layer formed in the above step of plasma etching. The semiconductor substrate surface is irradiated with ultraviolet rays under a low pressure in order to dissociate and remove fluorine atoms chemically adsorbed to the semiconductor substrate surface upon the latter plasma etching.