U.S. patents available from 1976 to present.
U.S. patent applications available from 2005 to present.

Multi-chip integrated circuit module and method for fabrication thereof

Patent 5306670 Issued on April 26, 1994. Estimated Expiration Date: Icon_subject February 9, 2013. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.

Patent References

Microcircuit package and sealing method
Patent #: 4633573
Issued on: 01/06/1987
Inventor: Scherer

Method of manufacturing a multichip package with increased adhesive strength
Patent #: 4874721
Issued on: 10/17/1989
Inventor: Kimura, et al.

Process for manufacturing a metal pin grid array package
Patent #: 5098864
Issued on: 03/24/1992
Inventor: Mahulikar

Plastic pin grid array package
Patent #: 5102829
Issued on: 04/07/1992
Inventor: Cohn

Semiconductor device and production method thereof
Patent #: 5188984
Issued on: 02/23/1993
Inventor: Nishiguchi

Method of manufacturing a high lead count circuit board Patent #: 5206188
Issued on: 04/27/1993
Inventor: Hiroi, et al.

Inventors

Assignee

Application

No. 015510 filed on 02/09/1993

US Classes:

29/832, Assembling to base an electrical component, e.g., capacitor, etc.257/E23.172, Assembly of plurality of insulating substrates (EPO)257/E23.173, Multilayer substrates (EPO)257/E23.174, Conductive vias through substrate with or without pins, e.g., buried coaxial conductors (EPO)257/E23.178, Chips being integrally enclosed by interconnect and support structures (EPO)257/E25.012, Devices being arranged next to each other (EPO)438/118, Including adhesive bonding step438/119, Electrically conductive adhesive438/126And encapsulating

Examiners

Primary: Hearn, Brian E.
Assistant: Picardat, Kevin M.

Attorney, Agent or Firm

International Class

H01L 021/60

Abstract

A multi-chip integrated circuit module includes a supporting layer of laminate material over which a high-density interconnect structure is formed. The laminate layer includes a first upper laminate layer (10) having a hole (14) disposed therein for receiving an integrated circuit chip die (56). A lower core laminate layer (16) having a conductive layer (18) and conductive layer (20) disposed on opposite sides thereof is laminated to the lower surface of the layer (10). Plated-through holes (36), (38) and (40) are formed through the two layers (10) and (16) to connect the conductive layer (20) with a conductive layer (12) on the upper surface of the layer (10). A high-density interconnect layer includes two laminate layers (126) and (138), each having vias formed therethrough and via interconnect structures disposed on the surfaces thereof. The via interconnect structures in the layer (126) allow for connections from the die (56) to the conductive layer (12). The via interconnect structures formed in the layer (138) allow interconnection from the upper surface of layer (138) to via interconnects formed in the layer (126). An I/O connector is interfaced with select ones of the plated-through holes with pins (162) and (164). This allows an interface from the module to an operating system through pins (166).

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