Semiconductor sealing mold
Patent 5302850 Issued on April 12, 1994. Estimated Expiration Date: 
August 30, 2013. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.
August 30, 2013. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.Patent ReferencesProcess for encapsulating electronic components in plastic Method of encapsulating microelectronic elements Lead frame and semiconductor device Patent #: 5018003 InventorAssigneeApplicationNo. 114413 filed on 08/30/1993US Classes:257/667, With dam or vent for encapsulant249/141, Including auxiliary port for transmission of fluid, i.e., vent or drain249/160, Having plural mold sections257/787, ENCAPSULATED257/E21.504, Moulds (EPO)264/272.17Semiconductor or barrier layer device (e.g., integrated circuit, transistor, etc.)ExaminersPrimary: Mintel, WilliamAssistant: Potter, Roy Attorney, Agent or FirmForeign Patent References
International ClassH01L 023/28Foreign Application Priority Data1989-09-18 JPAbstractA semiconductor sealing mold for sealing a semiconductor element within a thermosetting resin is provided with resin inflow openings formed in oppositely and substantially symmetrically opposed relation to the active surface and back surface of a lead frame connected semiconductor element. As a result, the application of the molding process and method of encapsulation of the semiconductor element can be accomplished under conditions of uniformly applied pressure to opposite surfaces of the semiconductor element and extending outwardly in all radial directions from the center of the semiconductor element. Furthermore, since the bonding wires and lead frame leads are substantially aligned in the same radial directions from the center of the semiconductor element, damage does not occur to these wires or leads during the molding process. | |
