Dielectric films for use in magnetoresistive transducers
Patent 5302461 Issued on April 12, 1994. Estimated Expiration Date: 
June 5, 2012. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.
June 5, 2012. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.Patent References 3860965 3862017 Magnetoresistive read head assembly for servo operation Thin film magnetic heads and substrates therefore Lift-off process for patterning shields in thin magnetic recording heads Method for making a magnetoresistive read transducer Amorphous oxide film and article having such film thereon Patent #: 5110637 InventorApplicationNo. 894398 filed on 06/05/1992US Classes:428/472, Refractory metal salt or oxide257/E43.004, Magnetic-field-controlled resistors (EPO)360/122, Head surface structure360/315, Having multiple interconnected single film MR sensors (e.g., dual magnetoresistive sensor)360/320, Detail of head insulation428/701, O-containing metal compound428/702O-containingExaminersPrimary: Turner, A. A.Foreign Patent References
International ClassG11B 005/30AbstractA new class of materials for use as a dielectric to separate various metallic layers within a magnetoresistive transducer. The materials include oxides of Ta, Hf, Zr, Y, Ti, or Nb. Thin films of these materials, when fabricated in accordance with the teachings of the invention, constitute dielectric films which maintain their integrity as insulators at thicknesses down to 5 nm. Additionally, the adhesion of this class of dielectrics equals or exceeds that of commonly used dielectrics.Other References
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