Process for making substantially smooth diamond
November 13, 2012. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.Patent ReferencesMethod of machining hard and brittle material Thermistor and method for producing the same Thin film single crystal diamond substrate Processes for the preparation of polycrystalline diamond films Electrical contacts on diamond Single crystal semiconductor substrate articles and semiconductor devices comprising same Diamond film thermistor Method and apparatus for semiconductor circuit chip cooling Halogen-assisted chemical vapor deposition of diamond Diamond films and method of growing diamond films on nondiamond substrates InventorsAssigneeApplicationNo. 975817 filed on 11/13/1992US Classes:216/81, Etching elemental carbon containing substrate216/52, MECHANICALLY SHAPING, DEFORMING, OR ABRADING OF SUBSTRATE216/66, Using ion beam, ultraviolet, or visible light216/67, Using plasma257/E21.237, Mechanical treatment, e.g., grinding, polishing, cutting (EPO)257/E21.244, Involving dielectric removal step (EPO)438/105, HAVING DIAMOND SEMICONDUCTOR COMPONENT438/692, Simultaneous (e.g., chemical-mechanical polishing, etc.)438/699, Plural coating steps451/41Glass or stone abradingExaminersPrimary: Quach, T. N.Assistant: Holtzman, Laura M. Attorney, Agent or FirmForeign Patent References
International ClassH01L 021/00AbstractThe present invention provides a process for making a diamond layer having a substantially smooth upper surface and a predetermined thickness on a substrate. The process includes depositing a patterned polish stopping layer on a substrate to a predetermined thickness while leaving predetermined portions of the substrate exposed. A diamond layer is than deposited on the polish stopping layer and on the predetermined portions of the substrate left exposed. The diamond layer is polished down to the polish stopping layer thereby forming a diamond layer on the substrate having a thickness substantially equal to the predetermined thickness of the polish stopping layer. The polish is conducted by a method that includes the mechanical and/or chemical consumption of the diamond layer. The polish stopping layer is capable of substantially stopping the consumption of the diamond layer.Other References
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