High temperature amorphous memory device for an electrically alterable read-only memory
Thin film memory device employing amorphous semiconductor materials
Thin film electrical devices with amorphous carbon electrodes and method of making same
Electrically erasable phase change memory Patent #: 5166758
ApplicationNo. 747053 filed on 08/19/1991
US Classes:257/3, With means to localize region of conduction (e.g., "pore" structure)257/4, With specified electrode composition or configuration257/5, In array257/E27.004, Including solid state component for rectifying, amplifying, or switching without a potential barrier or surface barrier (EPO)257/E27.103, Electrically programmable ROM (EPO)257/E45.002Bistable switching devices, e.g., Ovshinsky-effect devices (EPO)
ExaminersPrimary: Larkins, William D.
International ClassH01L 045/00
AbstractA solid state, directly overwritable, electronic, non-volatile, high density, low cost, low energy, high speed, readily manufacturable, multibit single cell memory based upon phenomenologically novel electrical switching characteristics provided by a unique class of semiconductor materials in unique configurations, which memory exhibits orders of magnitude higher switching speeds at remarkably reduced energy levels. The novel memory of the instant invention is characterized, inter alia, by numerous stable and truly non-volatile detectable configurations of local atomic and/or electronic order, which can be selectively and repeatably accessed by electrical input signals of varying pulse voltage and duration.