Tri-layer titanium coating for an aluminum layer of a semiconductor device
Patent 5289035 Issued on February 22, 1994. Estimated Expiration Date: 
July 15, 2012. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.
July 15, 2012. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.Patent ReferencesMultilayer interconnection for integrated circuit structure having two or more conductive metal layers Process for making integrated circuits having titanium nitride triple interconnect Multilayer light scattering photovoltaic back reflector and method of making same Conductive contact plug and a method of forming a conductive contact plug in an integrated circuit using laser planarization Patent #: 5124780 InventorsApplicationNo. 914755 filed on 07/15/1992US Classes:257/750, Layered257/751, At least one layer forms a diffusion barrier257/763, At least one layer of molybdenum, titanium, or tungsten257/913, WITH MEANS TO ABSORB OR LOCALIZE UNWANTED IMPURITIES OR DEFECTS FROM SEMICONDUCTORS (E.G., HEAVY METAL GETTERING)257/915, WITH TITANIUM NITRIDE PORTION OR REGION257/E21.582, Characterized by formation and post treatment of conductors, e.g., patterning (EPO)257/E23.166Containing conductive organic materials or pastes, e.g., conductive adhesives, inks (EPO)ExaminersPrimary: Jackson, JeromeAssistant: Arroyo, T. M. Attorney, Agent or FirmForeign Patent References
International ClassesH01L 023/48H01L 029/46 H01L 029/54 H01L 029/62 AbstractA tri-layer titanium coating for an aluminum layer of a semiconductor device. An aluminum layer used for interconnecting individual devices of an integrated circuit is formed on a semiconductor material. A first titanium nitride layer is deposited on the aluminum layer. A titanium layer is deposited on the first titanium nitride layer. A second titanium nitride layer is then deposited on the titanium layer. The tri-layer titanium coating prevents the formation of Al2 O3 and AIF3 during the etching of a via hole in an intermetal dielectric layer deposited above the second titanium nitride layer.Field of SearchLightWith means for increasing light absorption (e.g., redirection of unabsorbed light) Antireflection coating WITH MEANS TO ABSORB OR LOCALIZE UNWANTED IMPURITIES OR DEFECTS FROM SEMICONDUCTORS (E.G., HEAVY METAL GETTERING) Layered At least one layer forms a diffusion barrier At least one layer of molybdenum, titanium, or tungsten | |
