Method and apparatus for detecting defect on semiconductor substrate surface
Patent 5271796 Issued on December 21, 1993. Estimated Expiration Date: 
March 27, 2012. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.
March 27, 2012. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.Patent ReferencesMethod for detecting crystal defects in semiconductor silicon and detecting solution therefor Patent #: 4243473 InventorsApplicationNo. 858700 filed on 03/27/1992US Classes:438/16, Optical characteristic sensed252/79.5Alkali metal hydroxide containingExaminersPrimary: Powell, William A.Attorney, Agent or FirmForeign Patent References
International ClassesH01L 021/306B44C 001/22 Foreign Application Priority Data1991-03-27 JPAbstractA method of detecting a defect on the surface of a semiconductor substrate, including: a first etching step of etching a semiconductor substrate by a first etching amount; a first check step of applying a beam to the surface of the substrate underwent the first etching step, and detecting a first reflected beam; a second etching step of etching the substrate etched by the first etching amount, by an additional etching amount, to make the total etching amount a second etching amount; a second check step of applying the beam to the surface of the substrate underwent the second etching step, and detecting a second reflected beam; and a calculation step of calculating the relation between the first and second reflected beams.Other References
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