Photovoltaic cell and method
January 13, 2012. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.Patent ReferencesMethods for improving solar cell open circuit voltage Thin film photovoltaic cells having blocking layers Polycrystalline photovoltaic cell Photovoltaic cell including doped cadmium telluride, a dislocation preventing agent and improved ohmic contacts Barrier layer for photovoltaic devices CuInSe2 thin film solar cell with thin CdS and transparent window layer Thin film cadmium telluride solar cell Solar cell module Method for forming a polycrystalline monolayer Solar cells incorporating transparent electrodes comprising hazy zinc oxide InventorAssigneeApplicationNo. 819281 filed on 01/13/1992US Classes:136/244, Panel or array136/256, Contact, coating, or surface geometry136/258, Polycrystalline or amorphous semiconductor136/260, Cadmium containing136/264, Selenium or tellurium containing257/184, Light responsive structure257/E27.124, In a repetitive configuration, e.g. planar multi-junction solar cells (EPO)257/E31.017, Characterized by doping material (EPO)257/E31.126, Transparent conductive layer (e.g., transparent conductive oxide (TCO), indium tin oxide (ITO) layer) (EPO)438/85, Having metal oxide or copper sulfide compound semiconductive component438/94, Heterojunction438/95, Chalcogen (i.e., oxygen (O), sulfur (S), selenium (Se), tellurium (Te)) containing438/97Polycrystalline semiconductorExaminersPrimary: Weisstuch, AaronAttorney, Agent or FirmInternational ClassesH01L 031/042H01L 031/18 H01L 031/072 H01L 031/036.8 AbstractAn improved photovoltaic panel and method of forming a photovoltaic panel are disclosed for producing a high efficiency CdS/CdTe photovoltaic cell. The photovoltaic panel of the present invention is initially formed with a substantially thick CdS layer, and the effective thickness of the CdS layer is substantially reduced during regrowth to both form large diameter CdTe crystals and substantially reduce the effective thickness of the CdS layer by diffusion into the CdTe layer such that a majority of sunlight having a wavelength less than 520 nm passes through the CdS layer to the photovoltaic junction. Shorting of individual cells is substantially minimized by providing a conductive layer which is formed from two tin oxide layers, each having substantially dissimilar electrical conductivity, such that an electrically-conductive tin oxide layer interconnects the plurality of photovoltaic cells, while the comparatively high resistivity tin oxide layer prevents shorting of a cell. The electron density of the high resistivity tin oxide layer may be adjusted to be within a magnitude of approximately three orders of the presumed electron density of the CdTe layer, such that a energy-producing junction is formed in any area of flaws in the CdS layer by the CdTe layer and tin oxide layer. The photovoltaic panel of the present invention has a low material and manufacturing cost, yet produces a surprisingly high efficiency to produce a low cost per output watt photovoltaic panel.Other References
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