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ApplicationNo. 973606 filed on 11/09/1992
US Classes:438/54, Thermally responsive250/332, Including detector array250/338.4, Semiconducting type250/371, Methods257/E31.044Including only Group IV element (EPO)
ExaminersPrimary: Hearn, Brian E.
Assistant: Picardat, Kevin M.
Attorney, Agent or Firm
Foreign Patent References
International ClassH01L 003/18
AbstractA method for fabricating an integrated infrared sensitive bolometer having a polycrystalline element whereby an oxide region deposited on silicon nitride covered with a first polysilicon layer which is etched to provide a location for a bolometer element. A second polysilicon layer is deposited and doped to achieve a desired temperature coefficient of resistivity of 1 to 2%/°C. The second polysilicon layer forms an IR sensitive element over the oxide region. Openings are etched in the IR sensitive element to permit an etchant to remove the oxide region resulting in the sensitive element being suspended over a cavity.