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Multi-point pyrometry with real-time surface emissivity compensation

Patent 5255286 Issued on October 19, 1993. Estimated Expiration Date: Icon_subject July 10, 2012. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.

Patent References

3427861

3433052

3451254

3672221

3745830

3796099

Dual sensor radiation pyrometer
Patent #: 4579461
Issued on: 04/01/1986
Inventor: Rudolph

Method of and apparatus for detecting corrosion utilizing infrared analysis
Patent #: 4647220
Issued on: 03/03/1987
Inventor: Adams ,   et al.

Pyrometer #2
Patent #: 4647774
Issued on: 03/03/1987
Inventor: Brisk ,   et al.

Method of and apparatus for thermographic identification of parts
Patent #: 4733079
Issued on: 03/22/1988
Inventor: Adams ,   et al.

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Inventors

Assignee

Application

No. 911609 filed on 07/10/1992

US Classes:

374/121, By thermally emitted radiation250/227.11, Light conductor250/338.1, Infrared responsive250/341.4, With semiconductor sample250/341.8, Measuring infrared radiation reflected from sample356/43, OPTICAL PYROMETERS374/124, With scanning or temperature distribution display374/126, Having emissivity compensating or specified radiating surface374/128, Having significant signal handling circuitry (e.g., linearizing, emissivity compensation)374/131, With radiation conducting element374/137, Temperature distribution or profile374/161Change of optical property

Examiners

Primary: Cuchlinski, William A. Jr.
Assistant: Gutierrez, Diego

Attorney, Agent or Firm

Foreign Patent References

  • 3638455 DE 06/13/1988
  • 0149927 JP 09/13/1982
  • 0021045 JP 01/13/1987
  • 0082944 JP 04/13/1991

International Class

G01J 005/10

Abstract

A multi-point non-invasive, real-time pyrometry-based temperature sensor (200) for simultaneously sensing semiconductor wafer (22) temperature and compensating for wafer emissivity effects. The pyrometer (200) measures the radiant energy that a heated semiconductor wafer (22) emits and coherent beams of light (224) that the semiconductor wafer (22) reflects. As a result, the sensor (200) generates accurate, high-resolution multi-point measurements of semiconductor wafer (22) temperature during a device fabrication process. The pyrometer (200) includes an infrared laser source (202) that directs coherent light beam (203) into beam splitter (204). From the beam splitter (204), the coherent light beam (203) is split into numerous incident coherent beams (210). Beams (210) travel via optical fiber bundles (218) to the surface of semiconductor wafer (22) within the fabrication reactor (80). Each optical fiber bundle (218) collects reflected coherent light beam and radiant energy from wafer (22). Reflected coherent light beam (226) and radiant energy (222) is directed to a detector (240) for detecting signals and recording radiance, emissivity, and temperature values. Multiple optical fiber bundles (218) may be used in the sensor (200) for high spatial resolution multi-point measurements of wafer (22) temperature for precision real-time process control and uniformity optimizations.

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