Low-temperature plasma processor
Plasma treating method and apparatus therefor
Novel susceptor for use in chemical vapor deposition apparatus and its method of use Patent #: 5091208
ApplicationNo. 867516 filed on 04/13/1992
US Classes:118/723MR, With magnet (e.g., electron cyclotron resonance, etc.)118/724, By means to heat or cool118/725, Substrate heater118/728Work support
ExaminersPrimary: Hearn, Brian E.
Assistant: Baskin, Jonathan D.
Attorney, Agent or Firm
Foreign Patent References
International ClassesC23C 016/00
Foreign Application Priority Data1991-04-16 JP
AbstractA bias ECR plasma CVD apparatus includes an ECR plasma generating chamber and a plasma CVD chamber for forming a film on a substrate by a plasma CVD reaction. A heating device and a cooling device are provided at least in the vicinity of the substrate for maintaining the substrate and the vicinity thereof at a constant temperature. With this construction, the number of contaminant particles deposited on a surface of the substrate in forming the film on the substrate can be reduced.