Bias ECR plasma CVD apparatus comprising susceptor, clamp, and chamber wall heating and cooling means
Patent 5254171 Issued on October 19, 1993. Estimated Expiration Date: 
April 13, 2012. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.
April 13, 2012. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.Patent ReferencesPlasma apparatus Low-temperature plasma processor Plasma treating method and apparatus therefor Novel susceptor for use in chemical vapor deposition apparatus and its method of use Patent #: 5091208 InventorsAssigneeApplicationNo. 867516 filed on 04/13/1992US Classes:118/723MR, With magnet (e.g., electron cyclotron resonance, etc.)118/724, By means to heat or cool118/725, Substrate heater118/728Work supportExaminersPrimary: Hearn, Brian E.Assistant: Baskin, Jonathan D. Attorney, Agent or FirmForeign Patent References
International ClassesC23C 016/00C23C 016/50 Foreign Application Priority Data1991-04-16 JPAbstractA bias ECR plasma CVD apparatus includes an ECR plasma generating chamber and a plasma CVD chamber for forming a film on a substrate by a plasma CVD reaction. A heating device and a cooling device are provided at least in the vicinity of the substrate for maintaining the substrate and the vicinity thereof at a constant temperature. With this construction, the number of contaminant particles deposited on a surface of the substrate in forming the film on the substrate can be reduced. | |
