Process for making photovoltaic devices and resultant product
Patent 5248349 Issued on September 28, 1993. Estimated Expiration Date: 
May 12, 2012. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.
May 12, 2012. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.Patent ReferencesThin film cadmium telluride solar cell Modular continuous vapor deposition system Patent #: 5016562 InventorsAssigneeApplicationNo. 881683 filed on 05/12/1992US Classes:136/260, Cadmium containing118/719, Multizone chamber136/244, Panel or array136/258, Polycrystalline or amorphous semiconductor136/264, Selenium or tellurium containing257/184, Light responsive structure257/201, Between different group IV-VI or II-VI or III-V compounds other than GaAs/GaAlAs257/458, PIN detector, including combinations with non-light responsive active devices427/76, Coating is selenium, tellurium, or compound thereof438/61, Continuous processing438/95Chalcogen (i.e., oxygen (O), sulfur (S), selenium (Se), tellurium (Te)) containingExaminersPrimary: Weisstuch, AaronAttorney, Agent or FirmInternational ClassesH01L 031/6H01L 031/18 H01L 031/296 H01L 031/78 AbstractA process and apparatus (70) for making a large area photovoltaic device (22) that is capable of generating low cost electrical power. The apparatus (70) for performing the process includes an enclosure (126) providing a controlled environment in which an oven (156) is located. At least one and preferably a plurality of deposition stations (74,76,78) provide heated vapors of semiconductor material within the oven (156) for continuous elevated temperature deposition of semiconductor material on a sheet substrate (24) including a glass sheet (26) conveyed within the oven. The sheet substrate (24) is conveyed on a roller conveyor (184) within the oven (156) and the semiconductor material whose main layer (82) is cadmium telluride is deposited on an upwardly facing surface (28) of the substrate by each deposition station from a location within the oven above the roller conveyor. A cooling station (86) rapidly cools the substrate (24) after deposition of the semiconductor material thereon to strengthen the glass sheet of the substrate.Other References
Field of SearchCoating is selenium, tellurium, or compound thereofCadmium containing Selenium or tellurium containing Light responsive structure Between different group IV-VI or II-VI or III-V compounds other than GaAs/GaAlAs Light PIN detector, including combinations with non-light responsive active devices | |
