Gallium nitride group compound semiconductor laser diode

Patent 5247533 Issued on September 21, 1993. Estimated Expiration Date:

December 26, 2011. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.

Abstract Claims Description Full Text

Patent References

Process for growing III-V compound semiconductors on sapphire using a buffer layer
Patent #: 4855249
Issued on: 08/08/1989
Inventor: Akasaki , et al.

Process of vapor growth of gallium nitride and its apparatus
Patent #: 4911102
Issued on: 03/27/1990
Inventor: Manabe, et al.

Semiconductor light-emitting diode and method of manufacturing the same
Patent #: 5005057
Issued on: 04/02/1991
Inventor: Izumiya, et al.

Aluminum gallium nitride laser Patent #: 5146465
Issued on: 09/08/1992
Inventor: Khan, et al.

Inventors

Assignee

Application

No. 812913 filed on 12/26/1991

US Classes:

372/45.01, Particular confinement layer257/12, Heterojunction257/13, Incoherent light emitter257/E33.028Including nitride (e.g., AlGaN) (EPO)

Examiners

Primary: Epps, Georgia

Attorney, Agent or Firm

Cushman, Darby & Cushman

Foreign Patent References

2-042770 JP. 02/21/1990
2-257679 JP. 10/21/1990
0209895 JP 09/21/1991

International Class

H01S 003/19

Foreign Application Priority Data

1990-12-26 JP

Abstract

A gallium nitride group compound semiconductor laser diode includes at least one pn junction layer disposed between an n-type layer and a p-type layer. The n-type layer is formed from a gallium nitride group compound semiconductor material defined by the composition equation (Alx Ga1-x)y In1-y N (where 0ࣘxࣘ1 and 0ࣘyࣘ1). The p-type layer, doped with an acceptor impurity, is obtained by electron beam irradiating a gallium nitride group compound semiconductor material defined by the composition equation (Alx' Ga1-x')y' In1-y' N (where 0ࣘx'ࣘ1, 0ࣘy'ࣘ1, x=x' or x≠x', and, y=y' or y≠y'). The improved gallium nitride group semiconductor laser diode of the present invention is found to emit light in the visible short wavelength spectrum of light which includes the blue, violet and ultraviolet regions.

Other References

H. Amano, et al., "Stimulated Emission Near Ultraviolet at Room Temperature from a GaN Film Grown on Sapphire by MOVPE Using an A1N Buffer Layer", Japanese Journal of Applied Physics, vol. 29, No. 2, Feb., 1990 pp. 81-8