Method to getter contamination in semiconductor devices
October 22, 2011. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.Patent References 3909307 3923567 3929529 Method of ion implantation through an electrically insulative material Method of gettering using backside polycrystalline silicon Gettering semiconductor wafers with a high energy laser beam High performance silicon wafer and fabrication process Method of providing gettering sites through electrode windows Wafer fabrication by implanting through protective layer Process of gettering semiconductor devices InventorAssigneeApplicationNo. 781711 filed on 10/22/1991US Classes:438/402, And gettering of substrate257/E21.32, Of silicon on insulator (SOI) (EPO)257/E21.563, Using silicon implanted buried insulating layers, e.g., oxide layers, i.e., SIMOX technique (EPO)438/474, Ionized radiation (e.g., corpuscular or plasma treatment, etc.)438/476By layers which are coated, contacted, or diffusedExaminersPrimary: Hearn, Brian E.Assistant: Holtzman, Laura M. Attorney, Agent or FirmInternational ClassH01L 021/308AbstractA frontside gettering method for removing metallic contamination from a thin film SOI or SOS silicon device. Damage sites are created by ion implantation into inactive regions of a silicon substrate. An annealing step causes metallic contamination to diffuse from the active device region to the inactive region. The inactive region material is removed prior to subsequent processing steps.Other References
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