Method of ion implantation through an electrically insulative material
Method of gettering using backside polycrystalline silicon
Gettering semiconductor wafers with a high energy laser beam
High performance silicon wafer and fabrication process
Method of providing gettering sites through electrode windows
Wafer fabrication by implanting through protective layer
Process of gettering semiconductor devices
ApplicationNo. 781711 filed on 10/22/1991
US Classes:438/402, And gettering of substrate257/E21.32, Of silicon on insulator (SOI) (EPO)257/E21.563, Using silicon implanted buried insulating layers, e.g., oxide layers, i.e., SIMOX technique (EPO)438/474, Ionized radiation (e.g., corpuscular or plasma treatment, etc.)438/476By layers which are coated, contacted, or diffused
ExaminersPrimary: Hearn, Brian E.
Assistant: Holtzman, Laura M.
Attorney, Agent or Firm
International ClassH01L 021/308
AbstractA frontside gettering method for removing metallic contamination from a thin film SOI or SOS silicon device. Damage sites are created by ion implantation into inactive regions of a silicon substrate. An annealing step causes metallic contamination to diffuse from the active device region to the inactive region. The inactive region material is removed prior to subsequent processing steps.