Reactor for vapor phase epitaxy Patent #: 4714594
ApplicationNo. 695410 filed on 05/03/1991
US Classes:427/248.1, COATING BY VAPOR, GAS, OR SMOKE118/715, GAS OR VAPOR DEPOSITION118/725, Substrate heater118/730, Rotary427/255.5Moving the base
ExaminersPrimary: Bueker, Richard
International ClassC23C 016/00
AbstractApparatus for carrying out an epitaxial deposition process upon a single wafer disposed in a reaction chamber. The chamber has a substantially rectangular cross section reduced in area for increased system efficiency. A susceptor may be mounted in a well or in a downstream portion of a dual height chamber having a greater cross sectional area. Purge gas supplied through an aperture in the chamber prevents undesirable reactant gas deposits beneath the susceptor. The velocity profile and flow of reactant gas beneath the susceptor are controlled by a shaped transversely extending gap between the susceptor and the upstream portion of the chamber.