Process for plasma etching
Patent 5236549 Issued on August 17, 1993. Estimated Expiration Date: 
September 10, 2011. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.
September 10, 2011. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.Patent ReferencesSelective anisotropic reactive ion etching process for polysilicide composite structures Residue-free plasma etch of high temperature AlCu Anisotropic etch method for a sandwich structure Method for removing residual material from a cavity during the manufacture of a semiconductor device by utilizing plasma scattering Novel etch back process for tungsten contact/via filling Patent #: 5035768 InventorsApplicationNo. 757364 filed on 09/10/1991US Classes:438/695, Simultaneous etching and coating216/67, Using plasma216/79, Etching silicon containing substrate257/E21.311, Using plasma (EPO)257/E21.314, Using mask (EPO)430/322, Forming nonplanar surface438/696, Coating of sidewall438/714Including change in etch influencing parameter (e.g., energizing power, etchant composition, temperature, etc.)ExaminersPrimary: Powell, William A.Attorney, Agent or FirmForeign Patent References
International ClassesH01K 021/306B44C 001/22 C03C 015/00 C23F 001/00 Foreign Application Priority Data1990-09-17 JPAbstractPlasma is produced continuously in an etching switching period for switching from a partial plasma etching process to the next partial plasma etching process to thereby proceed with anisotropic plasma etching even in the etching switching period. There is no period in which isotropic etching is performed throughout the process. The time period for executing the partial plasma etching process, which follows the etching switching period, is shortened while throughput is improved. |
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