Quantum wave circuit
Patent 5233205 Issued on August 3, 1993. Estimated Expiration Date: 
June 22, 2012. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.
June 22, 2012. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.Patent ReferencesThree-terminal quantum device Electron tuned quantum well device Quantum-well logic using self-generated potentials Patent #: 4969018 InventorsAssigneeApplicationNo. 902554 filed on 06/22/1992US Classes:257/23, Current flow across well257/24, Field effect device257/25, Employing resonant tunneling257/192, Field effect transistor257/194, Doping on side of heterojunction with lower carrier affinity (e.g., high electron mobility transistor (HEMT))257/E27.012, Made of compound semiconductor material, e.g. III-V material (EPO)257/E29.168, Quantum effect device (EPO)326/101, SIGNIFICANT INTEGRATED STRUCTURE, LAYOUT, OR LAYOUT INTERCONNECTIONS326/104, FUNCTION OF AND, OR, NAND, NOR, OR NOT326/116Schottky-gate FET (i.e., MESFET)ExaminersPrimary: James, Andrew J.Assistant: Ngo, Ngan Van Attorney, Agent or FirmForeign Patent References
International ClassesH01L 029/161H01L 027/12 H01L 045/00 Foreign Application Priority Data1989-09-25 JPAbstractA novel concept and structure of a semiconductor circuit are disclosed which utilize the fact that the interaction between the carriers such as electrons and holes supplied in a meso-scopic region and the potential field formed in the meso-scopic region leads to such effects as quantum interference and resonance, with the result that the output intensity is changed.Other References
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