Method and apparatus for improving planarity of chemical-mechanical planarization operations

Patent 5232875 Issued on August 3, 1993. Estimated Expiration Date:

October 15, 2012. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.

Abstract Claims Description Full Text

Patent References

Process for chemical-mechanical polishing of III-V semiconductor materials
Patent #: 3979239
Issued on: 09/07/1976
Inventor: Walsh

Wafer flood polishing
Patent #: 4910155
Issued on: 03/20/1990
Inventor: Cote, et al.

Lapping means and method
Patent #: 4940507
Issued on: 07/10/1990
Inventor: Harbarger

In situ monitoring technique and apparatus for chemical/mechanical planarization endpoint detection Patent #: 5081421
Issued on: 01/14/1992
Inventor: Miller, et al.

Inventors

Application

No. 961565 filed on 10/15/1992

US Classes:

438/693, Utilizing particulate abradant216/88, Using film of etchant between a stationary surface and a moving surface (e.g., chemical lapping, etc.)216/89, Etchant contains solid particle (e.g., abrasive for polishing, etc.)438/959, MECHANICAL POLISHING OF WAFER451/63, Side face of disk451/270Orbital

Examiners

Primary: Chaudhuri, Olik
Assistant: Tsai, H. Jey

Attorney, Agent or Firm

Fox, III: Angus C.

International Classes

H01L 021/302
H01L 021/463

Abstract

A method and apparatus for improving planarity of chemical mechanical planarization of semiconductor wafers. The wafer is affixed to the planar surface of a wafer carrier. A planar platen, on which is mounted a polishing pad, is moved about in a plane parallel to the pad surface with either an orbital, fixed-direction vibratory, or random-direction vibratory motion. In one embodiment of the invention, pressure between the surface of the wafer to be polished and the moving polishing pad is generated by the force of gravity acting on at least the wafer and the carrier; in another it is provided by a mechanical force applied normal to the wafer surface. The polishing pad is wetted with a slurry having abrasive particles suspended in a liquid which may be chemically reactive with respect to at least one material on the wafer.