U.S. patents available from 1976 to present.
U.S. patent applications available from 2005 to present.

Charge transfer device having circuit for adjusting the high level of the reset pulse

Patent 5224134 Issued on June 29, 1993. Estimated Expiration Date: Icon_subject March 11, 2011. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.

Patent References

Charge transfer device output
Patent #: 4627083
Issued on: 12/02/1986
Inventor: Pelgrom ,   et al.

Output circuit of a charge transfer device
Patent #: 4974239
Issued on: 11/27/1990
Inventor: Miwada

Charge-coupled device floating diffusion output reset
Patent #: 4974240
Issued on: 11/27/1990
Inventor: Suzuki, et al.

Charge transfer device with reset voltage generating circuit
Patent #: 4996686
Issued on: 02/26/1991
Inventor: Imai, et al.

Charge transfer device Patent #: 5033068
Issued on: 07/16/1991
Inventor: Imai

Inventor

Assignee

Application

No. 667155 filed on 03/11/1991

US Classes:

377/60, Particular input or output means257/239, Signal charge detection type (e.g., floating diffusion or floating gate non-destructive output)377/58, Compensating for or preventing signal charge deterioration377/63, Charge-coupled device438/145Having additional electrical device

Examiners

Primary: Sikes, William L.
Assistant: Duong, Tai V.

Attorney, Agent or Firm

International Classes

H01L 029/78
G11C 019/28

Foreign Application Priority Data

1990-03-10 JP

Abstract

A charge transfer device comprises a charge transfer section having a charge transfer region formed in a semiconductor substrate and transfer electrodes formed on the semiconductor substrate, and a reset transistor having a floating diffusion region formed in the semiconductor substrate for receiving an electric charge transferred from the charge transfer section, a reset drain applied with a reset voltage, and a reset gate formed above a channel between the floating diffusion region and the reset drain, the reset gate being applied with a reset pulse. A a peak hold circuit is connected to the reset gate of the reset transistor for hold a peak level of the reset voltage. A potential detection circuit includes a dummy transistor having a drain connected to a voltage VDD, a source grounded through a resistor which is considerably larger than an on-resistance of the dummy transistor itself, and a gate electrode connected to an output of the peak hold circuit. The dummy transistor has the same characteristics as that of the reset transistor, and the drain of the dummy transistor is directly connected to the reset drain of the reset transistor.

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