Protection structure for an integrated circuit
Electrostatic discharge protection for semiconductor input devices Patent #: 5077591
ApplicationNo. 812190 filed on 12/20/1991
US Classes:257/546, With structural means to protect against excess or reversed polarity voltage257/362, Punchthrough or bipolar element257/363, Including resistor element257/603AVALANCHE DIODE (E.G., SO-CALLED "ZENER" DIODE HAVING BREAKDOWN VOLTAGE GREATER THAN 6 VOLTS)
ExaminersPrimary: Munson, Gene M.
Attorney, Agent or Firm
Foreign Patent References
International ClassesH01L 029/06
Foreign Application Priority Data1990-12-21 EP
AbstractA circuit for protection from overvoltages of an external electrical connection pad of a circuit integrated in an n type conductivity epitaxial layer formed on a monocrystal semiconductor substrate, comprises a lateral integrated transistor having an emitter connected to said pad, a collector connected to ground and a base connected to said pad across a resistor, and an integrated Zener diode functionally connected between the base and the collector of said transistor.