Electrostatic discharge protection device for an integrated circuit pad and related integrated structure
Patent 5223737 Issued on June 29, 1993. Estimated Expiration Date: 
December 20, 2011. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.
December 20, 2011. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.Patent ReferencesProtection structure for an integrated circuit Electrostatic discharge protection for semiconductor input devices Patent #: 5077591 InventorAssigneeApplicationNo. 812190 filed on 12/20/1991US Classes:257/546, With structural means to protect against excess or reversed polarity voltage257/362, Punchthrough or bipolar element257/363, Including resistor element257/603AVALANCHE DIODE (E.G., SO-CALLED "ZENER" DIODE HAVING BREAKDOWN VOLTAGE GREATER THAN 6 VOLTS)ExaminersPrimary: Munson, Gene M.Attorney, Agent or FirmForeign Patent References
International ClassesH01L 029/06H01L 029/90 Foreign Application Priority Data1990-12-21 EPAbstractA circuit for protection from overvoltages of an external electrical connection pad of a circuit integrated in an n type conductivity epitaxial layer formed on a monocrystal semiconductor substrate, comprises a lateral integrated transistor having an emitter connected to said pad, a collector connected to ground and a base connected to said pad across a resistor, and an integrated Zener diode functionally connected between the base and the collector of said transistor.Other References
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