Method and device for the storage of analog signals
Charge coupled device memory with method of doubled storage capacity and independent of process parameters and temperature
Acquisition and storage of analog signals
ROM memory cell with 2n FET channel widths
ROM Storage location having more than two states
Multiple bit read-only memory cell and its sense amplifier
Multi-level charge-coupled device memory system including analog-to-digital and trigger comparator circuits
Read-only storage using enhancement-mode, depletion-mode or omitted gate field-effect transistors
Memory with reference voltage generator
Multi-bit read only memory circuit
ApplicationNo. 652878 filed on 02/08/1991
US Classes:365/185.21, Sensing circuitry (e.g., current mirror)365/45, ANALOG STORAGE SYSTEMS365/185.19, Multiple pulses (e.g., ramp)365/185.2, Reference signal (e.g., dummy cell)365/185.22, Verify signal365/185.29, Erase365/186Single device per bit
ExaminersPrimary: Fears, Terrell W.
International ClassG11C 013/00
AbstractThe bit storage density of an Electrically Alterable Non-Volatile Memory (EANVM) cell is improved by increasing the number of bits that are stored on an individual memory cell, without increasing the size and complexity of the memory cell, by allowing a non-volatile memory cell to assume 2 n discrete memory states. A multi-bit memory cell uses a floating gate FET which is electrically programmed to 2 n different thresholds. The 2 n different conductivity states of the FET are provided as information storage states for the cell.