U.S. patents available from 1976 to present.
U.S. patent applications available from 2005 to present.

Reflective optical imaging system for extreme ultraviolet wavelengths

Patent 5212588 Issued on May 18, 1993. Estimated Expiration Date: Icon_subject April 9, 2011. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.

Patent References

3527526

3748015

Apparatus for microscopically viewing a specimen while detecting radiation particles therefrom
Patent #: 4130757
Issued on: 12/19/1978
Inventor: Frasher ,   et al.

All-reflective three element objective
Patent #: 4240707
Issued on: 12/23/1980
Inventor: Wetherell ,   et al.

Restricted off-axis field optical system
Patent #: 4293186
Issued on: 10/06/1981
Inventor: Offner

Imaging optical system
Patent #: 4798450
Issued on: 01/17/1989
Inventor: Suzuki

Four mirror afocal wide field of view optical system
Patent #: 4804258
Issued on: 02/14/1989
Inventor: Kebo

Reflection type reduction projection optical system
Patent #: 4812028
Issued on: 03/14/1989
Inventor: Matsumoto

Projection optical system for use in precise copy
Patent #: 4861148
Issued on: 08/29/1989
Inventor: Sato ,   et al.

High magnification reflecting microscope objective having a dual magnification mode and zoom magnification capability
Patent #: 4863253
Issued on: 09/05/1989
Inventor: Shafer ,   et al.

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Inventors

Assignee

Application

No. 682780 filed on 04/09/1991

US Classes:

359/355, Lens, lens system or component359/859With concave and convex mirrors in series

Examiners

Primary: Arnold, Bruce Y.
Assistant: Shafer, Ricky D.

Attorney, Agent or Firm

Foreign Patent References

  • 0252734 EP. 01/25/1988

International Class

G02B 005/10

Abstract

A projection reflection optical system has two mirrors in a coaxial, four reflection configuration to reproduce the image of an object. The mirrors have spherical reflection surfaces to provide a very high resolution of object feature wavelengths less than 200 μm, and preferably less than 100 μm. An image resolution of features less than 0.05-0.1 μm, is obtained over a large area field; i.e., 25.4 mm ×25.4 mm, with a distortion less than 0.1 of the resolution over the image field.

Other References

  • O. R. Wood II et al., "Short-Wavelength Annular-Field Optical System for Imaging Tenth Micron Features," 7 J. Vac. Sci. Technol., No. 6, pp. 1613-1615, (1989)
  • D. A. Markle, "The Future and Potential of Optical Scanning Systems," Solid State Technology, pp. 159-166 (1984)
  • T. E. Jewell et al., "20:1 Projection Soft X-Ray Lithography Using Tri-Level Resist," 1263 SPIE Electron-Beam, X-Ray, and Ion-Beam Technology: Submicrometer Lithographies IX, pp. 90-98 (1990)
  • S. T. Yang et al., "Effect of Central Obscuration on Image Formation in Projection Lithography," 1264 SPIE Optical/Laser Microlithography III, pp. 477-485 (1990)
  • J. B. Buckley et al., "Step and Scan: A System Overview of a New Lithography Tool," 1088 SPIE Optical/Laser Microlithography II, pp. 424-433 (1990)
  • B. E. Newnam, "Development of Free-Electron Lasers for XUV Projection Lithography," 1227 SPIE Free-Electron Lasers and Applications, pp. 116-133 (1990)
  • Communication from Dave Shafer to Brian Newnam dated May 18, 199
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