Method for forming patterned films on a substrate
June 6, 2011. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.Patent ReferencesMethod for forming patterned films utilizing a transparent lift-off mask Forming interconnections for multilevel interconnection metallurgy systems Method of making a printed circuit board Process for forming sub-micrometer patterns using silylation of resist side walls Method for lifting-off epitaxial films Method for removing an ion-implanted organic resin layer during fabrication of semiconductor devices Method for production of metallic sticker Use of particular mixtures of ethyl lactate and methyl ethyl ketone to remove undesirable peripheral material (e.g. edge beads) from photoresist-coated substrates Printed circuit board and method of preparing same Method of forming fine patterns InventorsApplicationNo. 711224 filed on 06/06/1991US Classes:216/36, Removing at least one of the self-sustaining preforms or a portion thereof216/47, Mask is multilayer resist216/49, Mask resist contains organic compound216/54, PATTERN OR DESIGN APPLIED BY TRANSFER257/E21.025, For lift-off process (EPO)257/E21.587By deposition over sacrificial masking layer, e.g., lift-off (EPO)ExaminersPrimary: Dang, ThiAttorney, Agent or FirmForeign Patent References
International ClassH01L 021/00AbstractA method of forming patterned film onto a substrate includes the steps of: depositing a polyether sulfone release layer 50; depositing a photoresist underlayer 52; patterning a predetermined film pattern through the underlayer 52 and the polyether sulfone layer 50; depositing a film layer 60 onto the wafer, thereby forming a patterned film 62 on the substrate 10; weakening the mechanical bonding strength to the polyether sulfone release layer 50 by immersing it in NMP; stripping off layers 54 and 60 by applying an adhesive backed tape 64 to the top of the film layer and applying a pulling force; and, removing the polyether sulfone release layer 50 by immersing the wafer in a NMP bath.Other References
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