Process for the formation of a polycrystalline semiconductor film by microwave plasma chemical vapor deposition method
Patent 5192717 Issued on March 9, 1993. Estimated Expiration Date: 
December 2, 2011. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.
December 2, 2011. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.Patent ReferencesModified chemical vapor deposition of an optical fiber using an rf plasma Method and apparatus for surface treatment by plasma Method for microwave plasma processing Plasma treating method and apparatus therefor Processing apparatus Apparatus for forming functional deposited film by microwave plasma CVD process Patent #: 4898118 InventorsAssigneeApplicationNo. 799900 filed on 12/02/1991US Classes:438/479, On insulating substrate or layer257/E21.101, Using reduction or decomposition of gaseous compound yielding solid condensate, i.e., chemical deposition (EPO)427/571, With magnetic enhancement427/573, With heated substrate427/575, Generated by microwave (i.e., 1mm to 1m)438/488, Polycrystalline semiconductor438/764Formation of semi-insulative polycrystalline siliconExaminersPrimary: Hearn, Brian E.Assistant: Everhart, B. Attorney, Agent or FirmInternational ClassesH01L 021/00H01L 021/02 H01L 021/306 Foreign Application Priority Data1989-04-28 JPAbstractA process for forming a high quality polycrystalline semiconductor film on an insulating substrate which comprises using a MW-PCVD apparatus comprising a plasma generation chamber provided with a microwave introducing means and a film-forming chamber connected through a grid electrode to said plasma generation chamber, said film-forming chamber containing said insulating substrate positioned on a substrate holder made of a conductive material being installed therein, producing plasma by contacting a film-forming raw material gas with a microwave energy applied through said microwave introducing means in said plasma generation chamber and introducing said plasma into said film-forming chamber while applying a high frequency voltage with a frequency in the range of from 20 to 500 MHz between said grid electrode and said substrate holder to thereby cause the formation of said polycrystalline semiconductor film on said insulating substrate maintained at a desired temperature. | |
