Method of forming and aligning patterns in deposted overlaying on GaAs
April 10, 2012. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.Patent ReferencesMethod of manufacturing field-effect transistors designed for operation at very high frequencies, using integrated techniques Methods of defining regions of crystalline material of the group III-V compounds Dry etching of copper patterns Method of manufacturing field-effect transistors with self-aligned grid and transistors thus obtained Method for the selective dry etching of layers of III-V group semiconductive materials Method of fabricating semiconductor devices Plasma etching using a bilayer mask Method of wet etching by use of carbonaceous masks Patent #: 5102498 InventorsApplicationNo. 866716 filed on 04/10/1992US Classes:438/606, Ga and As containing semiconductor216/40, FORMING PATTERN USING LIFT OFF TECHNIQUE216/66, Using ion beam, ultraviolet, or visible light216/81, Etching elemental carbon containing substrate257/E21.222, Vapor phase etching (EPO)257/E21.232, Characterized by their composition, e.g., multilayer masks, materials (EPO)438/656, Having refractory group metal (i.e., titanium (Ti), zirconium (Zr), hafnium (Hf), vanadium (V), niobium (Nb), tantalum (Ta), chromium (Cr), molybdenum (Mo), tungsten (W), or alloy thereof)438/670, Utilizing lift-off438/671, Utilizing multilayered mask438/686, Noble group metal (i.e., silver (Ag), gold (Au), platinum (Pt), palladium (Pd), rhodium (Rh), ruthenium (Ru), iridium (Ir), osmium (Os), or alloy thereof)438/930, TERNARY OR QUATERNARY SEMICONDUCTOR COMPRISED OF ELEMENTS FROM THREE DIFFERENT GROUPS (E.G., I-III-V, ETC.)438/945, Special (e.g., metal, etc.)438/951Lift-offExaminersPrimary: Quach, T. N.Attorney, Agent or FirmForeign Patent References
International ClassesH01L 021/283H01L 021/31 AbstractA method is described for forming patterns in deposited overlayers on GaAs and for aligning the formed patterns with etch features produced through dry processing. The deposited overlayers on GaAs are protected during pattern formation and subsequent processing by a durable, process integrable mask of hydrogenated amorphous carbon.Other References
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