Method for producing transparent conductive films
Patent 5180476 Issued on January 19, 1993. Estimated Expiration Date: 
February 26, 2011. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.
February 26, 2011. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.Patent ReferencesFormation of oxide films by reactive sputtering Device for coating a substrate Patent #: 5026471 InventorsAssigneeApplicationNo. 660840 filed on 02/26/1991US Classes:204/192.29, Transparent conductor204/298.08, Specified power supply or matching network204/298.19, Planar magnetron204/298.25Multi-chamber (e.g., including air lock, load/unload chamber, etc.)ExaminersPrimary: Weisstuch, AaronAttorney, Agent or FirmForeign Patent References
International ClassC23C 014/35Foreign Application Priority Data1990-02-27 JPAbstractA method of producing by sputtering an In-O, Sn-O, Zn-O, Cd-Sn-O or Cd-In-O based transparent conductive film according to the present invention uses the addition of a donor element, if needed. The sputtering is carried out by maintaining an intensity of a magnetic field on a surface of a target at 600 Oe or greater as well as by charging the target with a DC electric field superimposed by an RF electric field. An apparatus for producing an In-O, Sn-O, Zn-O, Cd-Sn-O or Cd-In-O base transparent conductive film uses the addition of a donor element, if needed. The apparatus has a vacuum chamber adapted to support therein a substrate and a target in an opposed relationship for forming by sputtering the transparent conductive film on the substrate by plasma discharge generated therebetween. The apparatus has a device for forming a magnetic field having a predetermined intensity of 600 Oe or greater on a surface of the target, a DC power supply for charging the target with a DC electric field, and an RF power supply for charging the target with an RF electric field superimposed on the DC electric field.Field of SearchTransparent conductorSpecified power supply or matching network Magnetically enhanced Flux passes through target surface Focusing target (e.g., conical target, plural inclined targets, etc.) Planar magnetron Moving magnetic field or target Cylindrical or curved magnetron target Moving magnetic field or target Multi-chamber (e.g., including air lock, load/unload chamber, etc.) |
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