Read/write optical memory
January 12, 2010. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.Patent References 3680060 3855579 3868653 3902788 Method of writing and erasing information for electrooptic ceramic memories Ferroelectric-photoconductor optical storage Photosensitivity enhancement of PLZT ceramics by positive ion implantation Erasable optical memory material from a ferroelectric polymer Method of bistable optical information storage using antiferroelectric phase PLZT ceramics Read/write optical memory Patent #: 5051950 InventorsAssigneeApplicationNo. 387082 filed on 07/31/1989US Classes:365/110, Electroluminescent and photoconductive365/109, Photoconductive and ferroelectric365/117FerroelectricExaminersPrimary: Nguyen, HoangAttorney, Agent or FirmInternational ClassesG11C 011/22G11C 011/42 AbstractAn improved read/write optical disk is disclosed which is capable of being rewritten more than 106 times. The disk utilizes a storage medium in which data is stored by causing a localized region of the storage medium to assume one of two states. The two states can be converted from one to another by the application of electric fields to the localized region of the storage medium. The localized region in question is selected by illuminating an area on an addressing layer directly above the region in question with light. The preferred embodiment utilizes a lead lanthanum zirconate titanate material for the storage medium. | |
