Apparatus for forming a thin film on surface of semiconductor substrate
June 28, 2011. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.Patent ReferencesSputtering apparatus and methods using a magnetic field Photon enhanced reactive ion etching Sputter-etching device Method for forming patterns Method of photochemical surface treatment Method and apparatus for dry processing of substrates Apparatus for thin film formation using photo-induced chemical reaction Conductive layer deposition method with a microwave enhanced CVD system Semiconductor device manufacturing method Method and device for cleaning substrates InventorsApplicationNo. 724488 filed on 06/28/1991US Classes:204/298.25, Multi-chamber (e.g., including air lock, load/unload chamber, etc.)118/715, GAS OR VAPOR DEPOSITION118/719, Multizone chamber156/345.31, With means for passing discrete workpiece through plural chambers (e.g., loadlock)156/345.5, With means for photochemical energization of a gas using ultraviolet, visible, or x-ray radiation156/345.52, With means to heat the workpiece support204/298.26Plural diverse treatment stations, zones, or coating material source within single chamberExaminersPrimary: Weisstuch, AaronAttorney, Agent or FirmForeign Patent References
International ClassesC23C 014/34C23C 014/56 Foreign Application Priority Data1988-05-12 JPAbstractA method of and an apparatus for removing a naturally grown oxide film and contaminants on the surface of a semiconductor substrate and then forming a thin film on the cleaned surface. The semiconductor substrate is placed in a pretreatment chamber and then hydrogen chloride gas is introduced into the chamber. Then, the semiconductor substrate is heated at a temperature between 200°~700° C. and the surface of the semiconductor substrate is irradiated with ultraviolet rays, whereby the naturally grown oxide film and other contaminants on the semiconductor substrate can be removed. Then, a thin film is formed on the cleaned surface of the semiconductor substrate by a CVD method or a sputter method. According to this method, the naturally oxide film and other contaminants can be removed from the surface of the semiconductor substrate at a low temperature and the thin film can be formed on the cleaned surface. As a result, an interface structure between the semiconductor substrate and the thin film can be controlled to be in a preferable state.Other References
|
| ||||||||||||||
