Method of depositing a coating containing silicon and oxygen
Patent 5165955 Issued on November 24, 1992. Estimated Expiration Date: 
May 28, 2011. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.
May 28, 2011. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.Patent References 3615272 Multilayer ceramics from hydrogen silsesquioxane Patent #: 4756977 InventorAssigneeApplicationNo. 706464 filed on 05/28/1991US Classes:427/575, Generated by microwave (i.e., 1mm to 1m)427/58, ELECTRICAL PRODUCT PRODUCED427/249.7, Diamond-like carbon coating (i.e., DLC)427/255.29, Inorganic oxygen, sulfur, selenium, or tellurium (i.e., chalcogen) containing coating (e.g., phosphosilicate, silicon oxynitride, etc.)427/255.37, Silicon dioxide coating427/255.394, Nitrogen containing coating (e.g., metal nitride, etc.)427/255.7, Plural coatings applied by vapor, gas, or smoke427/402, APPLYING SUPERPOSED DIVERSE COATING OR COATING A COATED BASE427/577, Inorganic carbon containing coating material, not as steel (e.g., carbide, etc.)427/578, Silicon containing coating material427/906Utilizing plasma (e.g., corona, glow discharge, cold plasma, etc.)ExaminersPrimary: Pianalto, BernardInternational ClassB05D 003/06AbstractThe present invention relates to the deposition of coatings containing silicon and oxygen from vaporized hydrogen silsesquioxane resin. The process comprises introducing the hydrogen silsesquioxane vapor into a deposition chamber containing the substrate to be coated and then inducing reaction of the vapor to form the coating. | |
