R. F. power transistor device with controlled common lead inductance
Package for push-pull semiconductor devices
High frequency semiconductor package
Molded lead frame dual in line package including a hybrid circuit
ApplicationNo. 587595 filed on 09/24/1990
US Classes:257/724, With discrete components257/916NARROW BAND GAP SEMICONDUCTOR MATERIAL (>>1EV)
ExaminersPrimary: James, Andrew J.
Assistant: Monin, Donald L. Jr.
Attorney, Agent or Firm
Foreign Patent References
International ClassesH01L 027/02
AbstractAn integrated circuit package is disclosed which has decoupling capacitors mounted within the cavity. A first embodiment has a thin-film capacitor mounted to the die attach of the header, with a first wire bond connecting the top surface to a lead finger of the header, and with a second wire bond connecting the top surface to the semiconductor chip mounted in the package. A second embodiment allows for decoupling of the power supply to a reference voltage other than that of the substrate, by providing a stacked capacitor where the top capacitor has a smaller cross-sectional area than the lower capacitor. Bond wires connect the top surface of the top capacitor to a first power supply lead, such as Vcc, and to the Vcc bond pad of the chip. The top surface of the lower capacitor, and consequently the lower surface of the top capacitor, are connected by bond wires to the reference supply (Vss) lead of the package and bond pad of the chip.
Field of SearchShared electrode