Method of manufacturing a semiconductor device by mega-electron volt ion implantation
July 5, 2010. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.Patent ReferencesMethod of radiation hardening and gettering semiconductor devices Method of removing contaminating impurities from device areas in a semiconductor wafer Method of reducing alpha-particle induced errors in an integrated circuit Method of providing gettering sites through electrode windows Process for producing semiconductor device Treatment process for semiconductor wafer Process of making semiconductors having shallow, hyperabrupt doped regions by implantation and two step annealing Semiconductor device with internal gettering region Method for fabricating shallow junctions by preamorphizing with dopant of same conductivity as substrate Patent #: 4889819 InventorsApplicationNo. 548548 filed on 07/05/1990US Classes:438/143, Gettering of semiconductor substrate257/E21.318, Of silicon body, e.g., for gettering (EPO)257/E21.336, Of electrically active species (EPO)438/310, Gettering of semiconductor substrate438/474Ionized radiation (e.g., corpuscular or plasma treatment, etc.)ExaminersPrimary: Chaudhuri, OlikAssistant: Trinh, Loc Q. Attorney, Agent or FirmForeign Patent References
International ClassesH01L 021/306H01L 021/265 Foreign Application Priority Data1989-07-05 JPAbstractA method of manufacturing a semiconductor device includes forming desired semiconductor elements in a major surface region of a semiconductor substrate, and ion-implanting a selected element into the semiconductor substrate from the major surface of the substrate to form an ion-implanted layer by the implanted element. A heat treatment is performed to the ion-implanted substrate, causing the ion-implanted layer to getter contaminant heavy metals.Other References
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