U.S. patents available from 1976 to present.
U.S. patent applications available from 2005 to present.

Multidimensional force sensor

Patent 5095762 Issued on March 17, 1992. Estimated Expiration Date: Icon_subject May 11, 2010. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.

Patent References

3304787

3693425

Planar semiconductor three direction acceleration detecting device and method of fabrication
Patent #: 4342227
Issued on: 08/03/1982
Inventor: Petersen ,   et al.

Accelerometer
Patent #: 4483194
Issued on: 11/20/1984
Inventor: Rudolf

Micromachined accelerometer with electrostatic return
Patent #: 4711128
Issued on: 12/08/1987
Inventor: Boura

Process for the production of a piezoresistive gauge and to an accelerometer incorporating such a gauge
Patent #: 4776924
Issued on: 10/11/1988
Inventor: Delapierre

Acceleration detecting apparatus formed by semiconductor
Patent #: 4891984
Issued on: 01/09/1990
Inventor: Fujii, et al.

Multidimensional force sensor Patent #: 4951510
Issued on: 08/28/1990
Inventor: Holm-Kennedy, et al.

Inventors

Assignee

Application

No. 522515 filed on 05/11/1990

US Classes:

73/862.041, Responsive to multiple loads or load components73/382R, GRAVITATIONAL DETERMINATION73/514.32, Capacitive sensor73/514.33, Resistive sensor73/862.626, Inductance or capacitance sensor73/866.5PROBE OR PROBE MOUNTING

Examiners

Primary: Ruehl, Charles A.

Attorney, Agent or Firm

Foreign Patent References

  • 62-118260 JP. 05/13/1987
  • 63-118667 JP. 05/13/1988

International Classes

G01L 005/16
G01L 001/14

Abstract

A multibeam structure measures displacement of one or more response elements to detect multiple components of applied force. The flexible beams are each coupled to a response element which may be displaced by a force arising from linear acceleration, angular acceleration, fluid flow, electric/magnetic/gravitational fields, and others sources. The displacement of the response element is detected with a variety of sensing methods including capacitive and piezoresistive sensing.

Other References

  • Bassous, E., "Fabrication of Novel Three-Dimensional Microstructures by the Anisotropic Etching of (100) and (110) Silicon", IEEE Transactions on Electron Devices, vol. ED 25, No. 10, Oct. 1978
  • Roylance, Lynn Michelle, and Angell, James B., "A Batch-Fabricated Silicon Accelerometer", IEEE Transactions on Electron Devices, vol. ED-26, No. 12, Dec. 1979, pp. 1911-191
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