Method and means for data storage using tunnel current data readout
Data storage method using state transformable materials Patent #: 4916688
ApplicationNo. 471841 filed on 01/29/1990
US Classes:369/126Electrical modification or sensing of storage medium (e.g., capacitive, resistive, electrostatic charge)
ExaminersPrimary: Popek, Joseph A.
Attorney, Agent or Firm
International ClassesG11C 007/00
Foreign Application Priority Data1989-02-02 JP
AbstractA memory device comprises a base plate with a memory element supporting layer, a probe with a pointed tip portion, and a fine scan element for causing the probe to scan over the surface of the memory element supporting layer. When the probe is approached to the surface of the memory element supporting layer and a suitable bias voltage is applied across the probe and the memory element supporting layer, a tunnel current is cause to flow therebetween and a specific region of the surface of the supporting layer is excited. The excited region can adsorb one molecule of, for example, di-(2-ethylhexyl)phthalate. By causing the memory element to be adsorbed selectively on the memory element supporting layer, data is recorded in the form of a projection-and-recess pattern. The recorded data can be read out by observing the surface configuration of the supporting layer in accordance with the principle of an STM (scanning tunneling microscope).