Tandem photovoltaic solar cell with III-V diffused junction booster cell
Patent 5091018 Issued on February 25, 1992. Estimated Expiration Date: 
May 14, 2010. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.
May 14, 2010. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.Patent References 3264707 Shallow-homojunction solar cells Method of forming electrical contact and antireflection layer on solar cells Method of crystallizing amorphous material with a moving energy beam Solar cells and photodetectors GaAs on GaSb mechanically stacked photovoltaic cells, package assembly, and modules High temperature photovoltaic system Patent #: 4889565 InventorsAssigneeApplicationNo. 523710 filed on 05/14/1990US Classes:136/246, With concentrator, orientator, reflector, or cooling means136/244, Panel or array136/249, Monolithic semiconductor136/251, Encapsulated or with housing136/256, Contact, coating, or surface geometry136/262, Gallium containing257/189, Layer is a group III-V semiconductor compound257/E25.007, Devices being solar cells (EPO)438/65, Having additional optical element (e.g., optical fiber, etc.)438/69, Including integrally formed optical element (e.g., reflective layer, luminescent layer, etc.)438/72, Having reflective or antireflective component438/74, Vertically arranged (e.g., tandem, stacked, etc.)438/93Compound semiconductorExaminersPrimary: Weisstuch, AaronAttorney, Agent or FirmInternational ClassesH01L 031/052H01L 031/05 H01L 031/030.4 H01L 031/18 AbstractA photovoltaic cell array involving rows and columns of tandem or stacked solar cell units composed of GaSa/GaSb associated with a radiation collector have produced measured energy conversion efficiencies of 31% AMO. The booster GaSb cell is manufactured by a process which produces a p-type diffusion region within an n-type substrate, has improved energy conversion efficiencies and can be mounted as part of a four terminal stacked solar cell unit.Other References
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