Hydrofluoric acid etcher and cascade rinser
December 3, 2010. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.Patent References 3879597 Substrate stripping and cleaning apparatus Process for inhibiting corrosion of steel materials built in inorganic materials Wafer processing machine Rinsing in acid processing of substrates Bowl for liquid spray processing machine Gaseous process and apparatus for removing films from substrates HF gas etching of wafers in an acid processor Patent #: 4900395 InventorsApplicationNo. 620744 filed on 12/03/1990US Classes:438/706, Vapor phase etching (i.e., dry etching)134/1.3, Semiconductor cleaning134/31, Gas or vapor condensation or absorption oowork134/102.1, Having steam, air or gas applying conduit156/345.24, With measuring, sensing, detection or process control means156/345.29, With etchant gas supply or exhaust structure located outside of etching chamber (e.g., supply tank, pipe network, exhaust pump, particle filter)438/743Silicon oxide or glassExaminersPrimary: Powell, William A.Attorney, Agent or FirmInternational ClassesB44C 001/22C03C 015/00 C03C 025/06 AbstractAn apparatus used to HF gas etch a plurality of integrated circuit wafers within an etch chamber, followed by a de-ionized water cascade rinse in the chamber. On completion of the rinse and removal of the wafer carriers, the apparatus, housing, and supply conduits are purged with an inert gas to prepare the apparatus for a next batch of wafer carriers. The apparatus includes process-control means for automatically controlling each step of the process. | |
