Method of fabricating a raised source/drain transistor
August 16, 2010. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.Patent ReferencesSelf-aligned metal process for field effect transistor integrated circuits Self-aligned metal process for field effect transistor integrated circuits using polycrystalline silicon gate electrodes Method of fabricating a monolithic integrated circuit structure Self-aligned metal process for field effect transistor integrated circuits using polycrystalline silicon gate electrodes Production of cupric and manganous alkanoates Method of making submicron FET structure Self-aligned inlay transistor with or without source and drain self-aligned metallization extensions Method of making a planar MOS device in polysilicon Method of making a planar structure containing MOS and bipolar transistors Manufacturing MOS semiconductor device with planarized conductive layer InventorsAssigneeApplicationNo. 568305 filed on 08/16/1990US Classes:438/297, Recessed oxide formed by localized oxidation (i.e., LOCOS)257/E21.43, Recessing gate by adding semiconductor material at source (S) or drain (D) location, e.g., transist or with elevated single crystal S and D (EPO)257/E29.04, Of field-effect transistors with insulated gate (EPO)438/300, Having elevated source or drain (e.g., epitaxially formed source or drain, etc.)438/305Plural doping stepsExaminersPrimary: Chaudhuri, OlikAssistant: Wilczewski, M. Attorney, Agent or FirmForeign Patent References
International ClassH01L 021/336AbstractA raised source/drain transistor is provided having thin sidewall spacing insulators (54) adjacent the transistor gate (48). A first sidewall spacer (64) is disposed adjacent thin sidewall spacing insulator (54) and raised source/drain region (60). A second sidewall spacer (66) is formed at the interface between field insulating region (44) and raised source/drain region (60). | |
