Low-temperature plasma processor
July 24, 2010. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.Patent ReferencesPlasma device comprising an intermediate electrode out of contact with a high frequency electrode to induce electrostatic attraction Planar magnetron sputtering apparatus Device for the cathode sputtering of a metal Method for microwave plasma processing Vacuum processing apparatus wherein temperature can be controlled Methods and apparatus for thermal transfer with a semiconductor wafer in vacuum Method of and apparatus for etching Wafer susceptor Plasma treating method and apparatus therefor Dry etching apparatus Patent #: 4956043 InventorsApplicationNo. 556449 filed on 07/24/1990US Classes:204/298.34, Auxiliary electrode, bias means or specified power supply118/723R, By creating electric field (e.g., gas activation, plasma, etc.)118/724, By means to heat or cool118/725, Substrate heater156/345.53, With means to cool the workpiece support204/298.31, Etching204/298.38Microwave excitationExaminersPrimary: Nguyen, NamAttorney, Agent or FirmInternational ClassC23F 001/02Foreign Application Priority Data1989-07-26 JPAbstractThe present invention relates to a plasma processor in which a sample such as semiconductor substrate is processed with a plasma under a cooled state. An electric insulator is interposed between a sample holder for arranging the sample thereon and a cooling container for cooling the sample holder, so as to electrically insulate them, whereby a bias voltage applied to the sample holder and a voltage for generating the plasma can be prevented from leaking, so as to stabilize the process. In addition, the insulator is held in close contact with the sample holder and the cooling container through members of a thermal conductor, whereby the occurrence of non-uniformity during the processing of the sample and the occurrence of a dispersion in the qualities of processed samples among sample lots or among processors can be suppressed. |
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