Fabrication method of contact window in semiconductor device
Patent 5073510 Issued on December 17, 1991. Estimated Expiration Date: 
October 23, 2010. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.
October 23, 2010. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.Patent ReferencesMethod of manufacturing a semiconductor device and device manufactured according to the method Oxide trench structure for polysilicon gates and interconnects Method for manufacturing a mosic having self-aligned contact holes Patent #: 4810666 InventorsAssigneeApplicationNo. 602464 filed on 10/23/1990US Classes:438/297, Recessed oxide formed by localized oxidation (i.e., LOCOS)257/E21.577, By forming via holes (EPO)438/303, Utilizing gate sidewall structure438/970SPECIFIED ETCH STOP MATERIALExaminersPrimary: Hearn, Brian E.Assistant: Chaudhari, C. Attorney, Agent or FirmInternational ClassH01L 021/265Foreign Application Priority Data1990-07-30 KRAbstractAccording to the present invention, the incomplete silicon exposure is prevented by the sufficient overetching after the formation of an etching-stop layer on an oxide layer for protecting a conductive layer from the damage of the protective oxide layer when the self-aligned contact window is formed. Therefore, the thickness of the protective oxide layer can be minimized, and the bend of the chip can be improved whereby the following process will be accomplished easily. | |
