Microdynamic release structure
Patent 5072288 Issued on December 10, 1991. Estimated Expiration Date: 
February 21, 2009. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.
February 21, 2009. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.Patent References 3039897 3641373 3672985 3761210 3769531 3835338 Electrostatically deformable thin silicon membranes Method of producing semiconductor displacement transducer Surface-acoustic-wave parametric device Vibrating beam rotation sensor InventorsAssigneeApplicationNo. 313206 filed on 02/21/1989US Classes:257/420, Means to reduce sensitivity to physical deformation310/309, Electrostatic310/311, Piezoelectric elements and devices310/330, Bending type310/332MultimorphExaminersPrimary: Hille, RolfAssistant: Tran, Minh Loan Attorney, Agent or FirmForeign Patent References
International ClassesH01L 023/48H01L 029/44 AbstractA selective chemical vapor deposition (CVD) tungsten process is used to fabricate three-dimensional tungsten cantilever beams on a substrate. Two beams form micromechanical tweezers that move in three dimensions by the application of potential differences between the beams, and between the beams and the silicon substrate. A high deposition rate selective tungsten CVD process is used to fabricate beams of greater than 3 micrometers thickness in patterned, CVD silicon dioxide trenches ion-implanted with silicon. Tweezers 200 micrometers in length with a cross section of 2.7 by 2.5 micrometers will close upon application of a voltage of less than 150 volts.Other References
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