U.S. patents available from 1976 to present.
U.S. patent applications available from 2005 to present.

Apparatus for endpoint detection during mechanical planarization of semiconductor wafers

Patent 5069002 Issued on December 3, 1991. Estimated Expiration Date: Icon_subject April 17, 2011. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.

Patent References

3699722

3841031

Process for chemical-mechanical polishing of III-V semiconductor materials
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Issued on: 09/07/1976
Inventor: Walsh

Polishing apparatus
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End point detection method for physical etching process
Patent #: 4358338
Issued on: 11/09/1982
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Apparatus for automatic lapping control
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Method for machining workpieces of brittle hard material into wafers
Patent #: 4663890
Issued on: 05/12/1987
Inventor: Brandt

In situ conductivity monitoring technique for chemical/mechanical planarization endpoint detection
Patent #: 4793895
Issued on: 12/27/1988
Inventor: Kaanta ,   et al.

Counterbalanced polishing apparatus
Patent #: 4811522
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Integrated circuit planarization by mechanical polishing
Patent #: 4879258
Issued on: 11/07/1989
Inventor: Fisher

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Inventors

Application

No. 686686 filed on 04/17/1991

US Classes:

451/1, PRECISION DEVICE OR PROCESS - OR WITH CONDITION RESPONSIVE CONTROL216/38, PLANARIZING A NONPLANAR SURFACE216/84, With measuring, testing, or inspecting257/E21.244, Involving dielectric removal step (EPO)438/692, Simultaneous (e.g., chemical-mechanical polishing, etc.)438/959, MECHANICAL POLISHING OF WAFER451/41, Glass or stone abrading451/287Planar surface abrading

Examiners

Primary: Parker, Roscoe V.

Attorney, Agent or Firm

International Classes

B24B 049/16
H01L 021/304

Abstract

An apparatus for detecting a planar endpoint on a semiconductor wafer during mechanical planarization of the wafer. The planar endpoint is detected by sensing a change in friction between the wafer and a polishing surface. This change of friction may be produced when, for instance, an oxide coating of the wafer is removed and a harder material is contacted by the polishing surface. In a preferred form, the change in friction is detected by rotating the wafer and polishing surface with electric motors and measuring current changes on one or both of the motors. This current change can then be used to produce a signal to operate control means for adjusting or stopping the process.

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