Thin oxide structure and method
Patent 5057463 Issued on October 15, 1991. Estimated Expiration Date: 
February 28, 2010. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.
February 28, 2010. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.Patent ReferencesMethod for forming silicon oxide films MOS Isolation processing A method of manufacturing semiconductor elements-isolating silicon oxide layers Post-oxidation anneal of silicon dioxide Method of fabricating passivated tunnel oxide Method of manufacturing a semiconductor device, in which a silicon wafer is provided at its surface with field oxide regions Patent #: 4906595 InventorsAssigneeApplicationNo. 486121 filed on 02/28/1990US Classes:438/762, At least one layer formed by reaction with substrate257/296, Insulated gate capacitor or insulated gate transistor combined with capacitor (e.g., dynamic memory cell)257/E21.285, Of silicon (EPO)438/773, In atmosphere containing water vapor (i.e., wet oxidation)438/774In atmosphere containing halogenExaminersPrimary: Chaudhuri, OlikAssistant: Wilczewski, M. Attorney, Agent or FirmForeign Patent References
International ClassH01L 021/316AbstractA method for forming a thin oxide layer structure includes the step of first growing a dry oxide layer. A layer grown in steam and chlorine is formed next, followed by a final dry oxide layer. An anneal step in an inert gas further improves the quality of the oxide layer. The structure formed by such a process provides a layer of steam grown oxide sandwiched between two layers of oxide grown in a dry atmosphere.Other References
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