Controlled high rate deposition of metal oxide films
Patent 5055319 Issued on October 8, 1991. Estimated Expiration Date: 
April 2, 2010. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.
April 2, 2010. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.Patent ReferencesWafer base for silicon carbide semiconductor device Patent #: 4767666 InventorsApplicationNo. 503298 filed on 04/02/1990US Classes:427/567, Silicon or metal oxide coating (e.g., glass, etc.)427/294, VACUUM UTILIZED PRIOR TO OR DURING COATING427/295, Metal base427/314, Heating or drying pretreatment427/319, Metal coating427/576, Metal, metal alloy, or metal oxide coating427/587Resistance or induction heatingExaminersPrimary: Pianalto, BernardAttorney, Agent or FirmInternational ClassB05D 003/06AbstractA process for depositing metal oxides by activated reactive evaporation (ARE) wherein deposition rate and film quality is controlled by reference to the relative amounts of metal and metal oxide present on the surface of the target material. The ratio of metal surface area to metal oxide surface area required to obtain high deposition rates is achieved by maintaining a relatively high concentration of oxygen in the reaction zone. This relative ratio of metal surface area to metal oxide surface area on target material provides a continuous indirect measure of film deposition rate and quality during the ARE process.Other References
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