Method of manufacturing semiconductor memory device
Patent 5049516 Issued on September 17, 1991. Estimated Expiration Date: 
December 15, 2009. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.
December 15, 2009. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.Patent ReferencesNonvolatile semiconductor memory device and method of its manufacture Semiconductor memory device Electrically alterable, nonvolatile floating gate memory device Non-volatile programmable integrated semiconductor memory cell Electrically alterable, nonvolatile floating gate memory device Electrically alterable, nonvolatile floating gate memory device Patent #: 4618876 InventorApplicationNo. 451066 filed on 12/15/1989US Classes:438/266, Having additional, nonmemory control electrode or channel portion (e.g., for accessing field effect transistor structure, etc.)438/261, Multiple interelectrode dielectrics or nonsilicon compound gate insulator438/594Tunnelling dielectric layerExaminersPrimary: Hearn, Brian E.Assistant: Thomas, Tom Attorney, Agent or FirmForeign Patent References
International ClassH01L 021/336Foreign Application Priority Data1987-12-02 JPAbstractAn EEPROM formed of three-layer polysilicon is provided. A floating gate is at a second level and a portion thereof is at a first level. A first control gate and a select gate are formed spaced against from each other at the first level and a portion of the second floating gate extends between them for formation of a tunnel region. A second control gate which is kept at the same potential as the first control gate exist at a third level. In this EEPROM, electrons are drawn from the floating gate by applying a high voltage to the select gate.Field of SearchStrobe | |
