Method and apparatus for measuring a deep impurity level of a semiconductor crystal

Patent 5047713 Issued on September 10, 1991. Estimated Expiration Date:

November 14, 2010. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.

Abstract Claims Description Full Text

Patent References

3605015

Method for deep level transient spectroscopy scanning and apparatus for carrying out the method
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Inventors

Assignee

Application

No. 612926 filed on 11/14/1990

US Classes:

324/752, Using light probe324/767, Diode374/4LEAK OR FLAW DETECTION

Examiners

Primary: Cuchlinski, William A. Jr.
Assistant: Bennett, G. Bradley

Attorney, Agent or Firm

Finnegan, Henderson, Farabow, Garrett, and Dunner

International Class

G01R 031/26

Foreign Application Priority Data

1990-08-09 JP

Abstract

A semiconductor specimen is held by a stage which is equipped with a heater (and a cooler) to change the temperature of the specimen in a predetermined range. Minority carriers are generated in the specimen by irradiating it with an energy beam such as a laser beam. A signal reflecting the recombination process of minority carriers is detected in a non-contact manner by a combination of microwave oscillator and a microwave detector through the microwave impedance coupling with the specimen. Decay curves are obtained at a plurality of temperatures in the predetermined range. A deep impurity level in the specimen is determined by performing an Arrhenius' plot on the basis of the plurality of signal decay curves and the corresponding specimen temperatures.

Other References

D. V. Lang, "Deep Level Transient Spectroscopy: A New Method to Characterize Traps in Semiconductors," Journal of Applied Physics, vol. 45, No. 7, Jul. 1974, pp. 3023-3032
Jacobs et al., "Microwave Techniques in Measurement of Lifetime in Germanium," Journal of Applied Physics, vol. 30, No. 7, Jul. 1959, pp. 1054-1060
Methods of Measurement for Semiconductor Materials, Process Controls and Devices, Quaterly, 04.01 to 06.30.6