Chromium-silicon oxide thin film resistors
Chromium-silicon-nitrogen resistor material
Thin film microstrip circuits
Deep trench etching process using CCl2 F2 /Ar and CCl2 F.sub. /O2 RIE
Method of producing a layered structure
Thin film chromium-silicon-carbon resistor
Multipoint pressure-sensing catheter system Patent #: 4815472
ApplicationNo. 368825 filed on 06/20/1989
US Classes:438/384, Deposited thin film resistor257/E21.006, Active material comprising refractory, transition, or noble metal or metal compound, e.g., alloy, silicide, oxide, nitride (EPO)257/E23.16, Additional layers associated with aluminum layers, e.g., adhesion, barrier, cladding layers (EPO)438/642, Diverse conductors438/643, At least one layer forms a diffusion barrier438/669And patterning of conductive layer
ExaminersPrimary: Chaudhuri, Olik
Assistant: Nguyen, Tan T.
International ClassH01L 021/461
AbstractProcess of making an IC chip with thin film resistors, and IC chips made by such process, wherein a chip substrate first is covered with layers of thin film and interconnect material (with an intermediate barrier layer if needed), such layers being etched away in predetermined regions in accordance with the metal interconnect pattern, the remaining layered material being aligned vertically, and thereafter, in a section of the remaining material, etching away the interconnect material (and barrier material if used) to expose the thin film material to form a thin film resistor which is self-aligned withe the adjoining sections of interconnect conductors. The material in the predetermined regions may be etched by a dry-etch (plasma) or by a wet-etch.