Process for forming a feature on a substrate without recessing the surface of the substrate
October 1, 2010. Estimated Expiration Date is calculated based on simple USPTO term provisions. It does not account for terminal disclaimers, term adjustments, failure to pay maintenance fees, or other factors which might affect the term of a patent.Patent ReferencesProcess for forming semiconductor devices using electron-sensitive resist patterns with controlled line profiles Process for making a T-gated transistor Technique for forming planarized gate structure 4927776 Process for fabricating small size electrodes in an integrated circuit Method of making a self-aligned field-effect transistor by the use of a dummy-gate Process for forming a self-aligned FET having a T-shaped gate structure Patent #: 4997778 InventorsAssigneeApplicationNo. 590856 filed on 10/01/1990US Classes:438/202, Including bipolar transistor (i.e., BiCMOS)257/E21.033, Comprising inorganic layer (EPO)257/E21.166, Conductive layer comprising semiconducting material (EPO)257/E21.206, Lithography, isolation, or planarization-related aspects of making conductor-insulator-semiconductor structure, e.g., sub-lithography lengths; to solve problems arising at crossing with side of device isolation (EPO)257/E21.434, With initial gate mask or masking layer complementary to prospective gate location, e.g., with dummy source and drain contacts (EPO)257/E21.696, Bipolar and MOS technologies (EPO)438/669, And patterning of conductive layer438/703Plural coating stepsExaminersPrimary: Hearn, Brian E.Assistant: Picardat, Kevin M. Attorney, Agent or FirmForeign Patent References
International ClassH01L 021/465AbstractA process for forming a feature on a substrate without etching into the surface of the substrate and causing recessed regions. A first layer of material is deposited to overlie the substrate and is formed of a different material to the substrate. The first layer is patterned, using conventional photolithography, to form windows in the first layer of material which expose a substrate surface. The etch selectively etches the first layer of material without substantially etching into the substrate material. A second layer of material, which is the same material as the substrate, is deposited to overlie the first layer of material and makes physical contact with the substrate through the windows patterned in the first layer. The second layer is blanket etched so that isolated regions are formed in regions defined by the windows patterned in the first layer.Other References
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